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APT66F60B2 APT66F60L
600V, 70A, 0.09 Max, trr 310ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-MaxTM
TO-264
APT66F60B2
APT66F60L
D
Single die FREDFET
G S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 70 44 245 30 1845 33
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N*m -55 0.11 150 C 300 oz g in*lbf
Rev B 04-2009 050-8173
Min
Typ
Max 1135 0.11
Unit W C/W
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C
APT66F60B2_L
Typ 0.57 0.075 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 600
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.09 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 33A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 65 13190 135 1210 645
Max
Unit S
pF
VGS = 0V, VDS = 0V to 400V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 33A, VDS = 300V Resistive Switching VDD = 400V, ID = 33A RG = 2.2 6 , VGG = 15V
335 330 70 140 75 85 225 70
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 70
Unit
G S
A 246 1.0 310 570 V ns C A 20 V/ns
ISD = 33A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 33A 3 VDD = 100V diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 33A, di/dt 1000A/s, VDD = 400V, TJ = 125C
268 474 1.6 4.2 11.4 16.9
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 3.39mH, RG =25, IAS = 33A.
04-2009 Rev B 050-8173
3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.28E-7/VDS^2 + 5.36E-8/VDS + 2.00E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT66F60B2_L
250
V
GS
120
= 10V T = 125C
J
TJ = -55C
V
200 ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A)
100
GS
= 7&8V
80
6V
150
TJ = 25C
60
100
40
5.5V
50
TJ = 150C TJ = 125C
20 0
5V 4.5V
0
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 33A
250
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.5 ID, DRAIN CURRENT (A)
200
2.0
150
TJ = -55C TJ = 25C TJ = 125C
1.5
100
1.0
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 120
50
0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
20,000 10,000 Ciss
100 gfs, TRANSCONDUCTANCE
TJ = -55C TJ = 25C TJ = 125C
80
C, CAPACITANCE (pF)
1000 Coss 100 Crss
60
40
20 0 10
0
10
20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current
80
100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12
ID = 33A
250 ISD, REVERSE DRAIN CURRENT (A)
200
VDS = 120V
10
VDS = 300V
150
TJ = 25C
8 6
VDS = 480V
100
TJ = 150C
4 2 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
50
050-8173
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
0
Rev B 04-2009
APT66F60B2_L
300 100 ID, DRAIN CURRENT (A)
IDM
300 100 ID, DRAIN CURRENT (A)
IDM
10
Rds(on)
13s 100s 1ms 10ms 100ms TJ = 125C TC = 75C DC line
10
Rds(on) TJ = 150C TC = 25C
13s 100s 1ms 10ms
1
1
Scaling for Different Case & Junction 100ms Temperatures: DC line ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.12 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.10
0.08
0.7
0.06
0.5
Note:
PDM
t1 t2
0.04
0.3 SINGLE PULSE 0.1 0.05
t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.02
0
10
-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
1.0
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
04-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
050-8173
Rev B
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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